Selected Publications

1. Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations on a Fe(001) surface, A. N. Chantis, K. D. Belashchenko, E. Y. Tsymbal, and M van Schilfgaarde, Phys. Rev. Lett. 98, 046601 (2007) Link
   
2. Principles Study of the Aluminum - Cubic Boron Nitride Interface; Newton Ooi, L. G. Hector Jr., J. B. Adams, D. Stanzione Jr. - Journal of Adhesion, volume 82, number 8, august 2006 Pages 779 - 803
3. Electronic structure and bonding in hexagonal boron nitride; N. Ooi, A. Rairkar, L. Lindsley, J. B. Adams - Journal of Physics: Condensed Matter Physics 18 (2006) Pages 97 - 115
4. Quasiparticle self-consistent GW theory, M. van Schilfgaarde, Takao Kotani, S. V. Faleev, Phys. Rev. Lett. 96, 226402 (2006). Link
5. First-Principles Combinatorial Design of Transition Temperatures in Multicomponent Systems: The Case of Mn in GaAs, A. Franceschetti, S. V. Dudiy, S. V. Barabash, A. Zunger, J. Xu, and M. van Schilfgaarde, Phys. Rev. Lett. 97, 047202 (2006) Link
6. Real-time coarsening dynamics of Ge/Si(100) nanostructures, Michael McKay, John Shumway, and Jeff Drucker, J. Appl. Phys. 99, 094305 (2006) Link
7. Biexciton recombination rates in self-assembled quantum dots, M. Wimmer, S. V. Nair, and J. Shumway, Phys. Rev. B 73, 165305 (2006) Link
8. Theoretical Study of Environmental Dependence of Oxygen Vacancy Formation in CeO2 - Y. Jiang, J.B. Adams, M. van Schilfgaarde,R. Sharma, P. Crozier, Appl Phys Lett 87(14), 2005, 141917 (1-3).
9. Y. Jiang, J.B. Adams, M. van Schilfgaarde, Density functional calculation of CeO2 surfaces and prediction of effects of oxygen partial pressure and temperature on stabilities." J. Chem. Phys. v123(6), 2005, 064701 (1-8).
10. D. Sun, W.F. Schneider, J.B. Adams, D. Sengupta, “The Molecular Origins of Selectivity in the Reduction of NOx by NH3”, Journal of Physical Chemistry A, 108 (2004) 9365-9375.
11. E. Chagarov and J.B. Adams, “Molecular dynamics simulations of mechanical deformation of amorphous silicon dioxide during chemical-mechanical polishing” J Appl. Phys 94 (6): 3853-3861 2003